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BSO080P03SHXUMA1 Технические параметры

Infineon Technologies  BSO080P03SHXUMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 12.6A Ta
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.79W Ta
Turn Off Delay Time 130 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8Terminations
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 15 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 14.9A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5890pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 136nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±25V
Fall Time (Typ) 110 ns
Continuous Drain Current (ID) 12.6A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 25V
Max Dual Supply Voltage -30V
Pulsed Drain Current-Max (IDM) 60A
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BSO080P03SHXUMA1 Документы

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