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BSO303PNTMA1 Технические параметры

Infineon Technologies  BSO303PNTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 55.4 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Max Power Dissipation 2W
Terminal Form GULL WING
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 2W
Turn On Delay Time 10.6 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 8.2A, 10V
Vgs(th) (Max) @ Id 2V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1761pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 72.5nC @ 10V
Rise Time 12.9ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 39.3 ns
Continuous Drain Current (ID) 8.2A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 97 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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BSO303PNTMA1 Документы

BSO303PNTMA1 brand manufacturers: Infineon Technologies, Anli stock, BSO303PNTMA1 reference price.Infineon Technologies. BSO303PNTMA1 parameters, BSO303PNTMA1 Datasheet PDF and pin diagram description download.You can use the BSO303PNTMA1 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find BSO303PNTMA1 pin diagram and circuit diagram and usage method of function,BSO303PNTMA1 electronics tutorials.You can download from the Anli.