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BSP125H6327XTSA1 Технические параметры

Infineon Technologies  BSP125H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 120mA Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.8W Ta
Turn Off Delay Time 20 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series SIPMOS®
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 4
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
Case Connection DRAIN
Turn On Delay Time 7.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45 Ω @ 120mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 94μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V
Rise Time 14.4ns
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Continuous Drain Current (ID) 120mA
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 600V
Nominal Vgs 1.9 V
Height 1.5mm
Length 6.5mm
Width 3.5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BSP125H6327XTSA1 Документы

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