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Infineon Technologies BSP129L6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Number of Pins | 4Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 350mA Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 0V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 1.8W Ta | |
| Turn Off Delay Time | 22 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | SIPMOS® | |
| Published | 2012 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Pin Count | 4 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Power Dissipation | 1.8W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 4.4 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 6 Ω @ 350mA, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 108μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 108pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.7nC @ 5V | |
| Rise Time | 4.1ns | |
| Drain to Source Voltage (Vdss) | 240V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 35 ns | |
| Continuous Drain Current (ID) | 350mA | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 0.35A | |
| Drain-source On Resistance-Max | 6Ohm | |
| FET Feature | Depletion Mode | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |