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BSP149H6327XTSA1 Технические параметры
Infineon Technologies BSP149H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Number of Pins | 4Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 660mA Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 0V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 1.8W Ta | |
| Turn Off Delay Time | 45 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Series | SIPMOS® | |
| Published | 2002 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 4 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Power Dissipation | 1.8W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 5.1 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 1.8 Ω @ 660mA, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 400μA | |
| Halogen Free | Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | 430pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V | |
| Rise Time | 3.4ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 21 ns | |
| Continuous Drain Current (ID) | 480mA | |
| Threshold Voltage | -1.4V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Max Dual Supply Voltage | 200V | |
| Drain Current-Max (Abs) (ID) | 0.66A | |
| Drain to Source Breakdown Voltage | 200V | |
| Pulsed Drain Current-Max (IDM) | 2.6A | |
| Dual Supply Voltage | 200V | |
| FET Feature | Depletion Mode | |
| Nominal Vgs | -1.4 V | |
| Height | 1.6mm | |
| Length | 6.5mm | |
| Width | 3.5mm | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
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