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BSP316PH6327XTSA1 Технические параметры

Infineon Technologies  BSP316PH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 680mA Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.8W Ta
Turn Off Delay Time 67.4 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series SIPMOS®
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 4.7 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1.8 Ω @ 680mA, 10V
Vgs(th) (Max) @ Id 2V @ 170μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 146pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V
Rise Time 7.5ns
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Fall Time (Typ) 25.9 ns
Continuous Drain Current (ID) 680mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -100V
Drain Current-Max (Abs) (ID) 0.68A
Pulsed Drain Current-Max (IDM) 2.72A
Height 1.6mm
Length 6.5mm
Width 3.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BSP316PH6327XTSA1 Документы

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