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BSP317PH6327XTSA1 Технические параметры

Infineon Technologies  BSP317PH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 430mA Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.8W Ta
Turn Off Delay Time 254 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series SIPMOS®
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 5.7 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 4 Ω @ 430mA, 10V
Vgs(th) (Max) @ Id 2V @ 370μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 262pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15.1nC @ 10V
Rise Time 11.1ns
Drain to Source Voltage (Vdss) 250V
Vgs (Max) ±20V
Fall Time (Typ) 67 ns
Continuous Drain Current (ID) 430mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -250V
Drain-source On Resistance-Max 4Ohm
Drain to Source Breakdown Voltage -250V
Height 1.6mm
Length 6.5mm
Width 3.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BSP317PH6327XTSA1 Документы

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