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BSP322PH6327XTSA1 Технические параметры

Infineon Technologies  BSP322PH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.8W Ta
Turn Off Delay Time 21.2 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series SIPMOS®
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 4.6 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 800m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 1V @ 380μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 372pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
Rise Time 4.3ns
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Fall Time (Typ) 8.3 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -100V
Drain Current-Max (Abs) (ID) 1A
Drain-source On Resistance-Max 0.8Ohm
Height 1.6mm
Length 6.5mm
Width 3.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BSP322PH6327XTSA1 Документы

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