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Infineon Technologies BSP324L6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Number of Pins | 4Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 170mA Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 1.8W Ta | |
| Turn Off Delay Time | 17 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | SIPMOS® | |
| Published | 2008 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Pin Count | 4 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.8W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 4.6 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 25 Ω @ 170mA, 10V | |
| Vgs(th) (Max) @ Id | 2.3V @ 94μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 154pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.9nC @ 10V | |
| Drain to Source Voltage (Vdss) | 400V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 68 ns | |
| Continuous Drain Current (ID) | 170mA | |
| Gate to Source Voltage (Vgs) | 20V | |
| Pulsed Drain Current-Max (IDM) | 0.68A | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |