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BSP373L6327HTSA1 Технические параметры

Infineon Technologies  BSP373L6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.7A Ta
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.8W Ta
Turn Off Delay Time 85 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SIPMOS®
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED
Voltage - Rated DC 100V
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating 1.7A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Reference Standard AEC-Q101
Configuration SINGLE WITH BUILT-IN DIODE
Voltage 100V
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 300m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Rise Time 30ns
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 1.7A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.3Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 6.8A
Width 6.7mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

BSP373L6327HTSA1 Документы

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