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BSS138N-E6327 Технические параметры

Infineon Technologies  BSS138N-E6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 230mA Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 360mW Ta
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SIPMOS®
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.21.00.95
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5 Ω @ 230mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 41pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.23A
DS Breakdown Voltage-Min 60V
Feedback Cap-Max (Crss) 3.8 pF
RoHS Status RoHS Compliant
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BSS138N-E6327 Документы

BSS138N-E6327 brand manufacturers: Infineon Technologies, Anli stock, BSS138N-E6327 reference price.Infineon Technologies. BSS138N-E6327 parameters, BSS138N-E6327 Datasheet PDF and pin diagram description download.You can use the BSS138N-E6327 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find BSS138N-E6327 pin diagram and circuit diagram and usage method of function,BSS138N-E6327 electronics tutorials.You can download from the Anli.