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BSS139H6327XTSA1 Технические параметры

Infineon Technologies  BSS139H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 100mA Ta
Drive Voltage (Max Rds On, Min Rds On) 0V 10V
Number of Elements 1 Element
Power Dissipation (Max) 360mW Ta
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SIPMOS®
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Power Dissipation 360mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14 Ω @ 100μA, 10V
Vgs(th) (Max) @ Id 1V @ 56μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 76pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 5V
Rise Time 5.4ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 40mA
Threshold Voltage -1.4V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 250V
Dual Supply Voltage 250V
FET Feature Depletion Mode
Nominal Vgs -1.4 V
Width 3.05mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BSS139H6327XTSA1 Документы

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