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BSS159NH6906XTSA1 Технические параметры

Infineon Technologies  BSS159NH6906XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 230mA Ta
Drive Voltage (Max Rds On, Min Rds On) 0V 10V
Number of Elements 1 Element
Power Dissipation (Max) 360mW Ta
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SIPMOS®
Published 2006
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
HTS Code 8541.21.00.95
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5 Ω @ 160mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 26μA
Input Capacitance (Ciss) (Max) @ Vds 44pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 5V
Rise Time 2.9ns
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Continuous Drain Current (ID) 230mA
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 60V
FET Feature Depletion Mode
Feedback Cap-Max (Crss) 5.9 pF
RoHS Status ROHS3 Compliant

BSS159NH6906XTSA1 Документы

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