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BSS192PE6327 Технические параметры

Infineon Technologies  BSS192PE6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 190mA Ta
Drive Voltage (Max Rds On, Min Rds On) 2.8V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1W Ta
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SIPMOS®
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.95
Voltage - Rated DC -250V
Terminal Position SINGLE
Terminal Form FLAT
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 255
Current Rating -190mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-F3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 12 Ω @ 190mA, 10V
Vgs(th) (Max) @ Id 2V @ 130μA
Input Capacitance (Ciss) (Max) @ Vds 104pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 10V
Rise Time 5.2ns
Drain to Source Voltage (Vdss) 250V
Vgs (Max) ±20V
Continuous Drain Current (ID) 190mA
Drain Current-Max (Abs) (ID) 0.19A
Feedback Cap-Max (Crss) 8 pF
RoHS Status RoHS Compliant
Lead Free Contains Lead

BSS192PE6327 Документы

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