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BSS192PH6327XTSA1 Технические параметры

Infineon Technologies  BSS192PH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 190mA Ta
Drive Voltage (Max Rds On, Min Rds On) 2.8V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1W Ta
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SIPMOS™
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Свойство продукта Значение свойства
HTS Code 8541.29.00.95
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 12 Ω @ 190mA, 10V
Vgs(th) (Max) @ Id 2V @ 130μA
Input Capacitance (Ciss) (Max) @ Vds 104pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 10V
Drain to Source Voltage (Vdss) 250V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.19A
DS Breakdown Voltage-Min 250V
Feedback Cap-Max (Crss) 8 pF
RoHS Status ROHS3 Compliant

BSS192PH6327XTSA1 Документы

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