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BSS84PWH6327XTSA1 Технические параметры

Infineon Technologies  BSS84PWH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 150mA Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 300mW Ta
Turn Off Delay Time 8.6 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series SIPMOS®
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -60V
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -150mA
Свойство продукта Значение свойства
Pin Count 3
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 6.7 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 8 Ω @ 150mA, 10V
Vgs(th) (Max) @ Id 2V @ 20μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 19.1pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
Rise Time 16.2ns
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Fall Time (Typ) 20.5 ns
Continuous Drain Current (ID) -150mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -60V
Drain-source On Resistance-Max 8Ohm
Drain to Source Breakdown Voltage -60V
Max Junction Temperature (Tj) 150°C
Height 1mm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BSS84PWH6327XTSA1 Документы

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