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BSZ0904NSIATMA1 Технические параметры
Infineon Technologies BSZ0904NSIATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 18 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 18A Ta 40A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2.1W Ta 37W Tc | |
| Turn Off Delay Time | 16 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | OptiMOS™ | |
| Published | 2010 | |
| JESD-609 Code | e3 | |
| Pbfree Code | no | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-N3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2.1W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 3.3 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 4m Ω @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 250μA | |
| Halogen Free | Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | 1463pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V | |
| Rise Time | 4.4ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 3 ns | |
| Continuous Drain Current (ID) | 18A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Max Dual Supply Voltage | 30V | |
| Drain Current-Max (Abs) (ID) | 40A | |
| Drain-source On Resistance-Max | 0.0057Ohm | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| FET Feature | Schottky Diode (Body) | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead |
Индекс :
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