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BSZ097N04LSGATMA1 Технические параметры

Infineon Technologies  BSZ097N04LSGATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 12A Ta 40A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.1W Ta 35W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2011
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Terminal Form NO LEAD
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-N5
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 35W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 14μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 2.4ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Avalanche Energy Rating (Eas) 20 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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BSZ097N04LSGATMA1 Документы

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