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BSZ110N08NS5ATMA1 Технические параметры

Infineon Technologies  BSZ110N08NS5ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 40A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 50W Tc
Turn Off Delay Time 15 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N3
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.8V @ 22μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 18.5nC @ 10V
Rise Time 3ns
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain to Source Breakdown Voltage 80V
Avalanche Energy Rating (Eas) 40 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

BSZ110N08NS5ATMA1 Документы

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