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BSZ215CHXTMA1 Технические параметры

Infineon Technologies  BSZ215CHXTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 5.1A 3.2A
Number of Elements 2 Elements
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Max Power Dissipation 2.5W
Terminal Position DUAL
Terminal Form NO LEAD
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N and P-Channel Complementary
Rds On (Max) @ Id, Vgs 55m Ω @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 110μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 419pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 3.2A
Max Dual Supply Voltage -20V
Drain Current-Max (Abs) (ID) 5.1A
Drain-source On Resistance-Max 0.055Ohm
Pulsed Drain Current-Max (IDM) 20A
Avalanche Energy Rating (Eas) 11 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 2.5V Drive
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BSZ215CHXTMA1 Документы

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