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BSZ42DN25NS3GATMA1 Технические параметры

Infineon Technologies  BSZ42DN25NS3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 5A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 33.8W Tc
Turn Off Delay Time 8 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2013
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Position DUAL
Terminal Form NO LEAD
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Pin Count 8
JESD-30 Code S-PDSO-N5
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 425m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 13μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 10V
Rise Time 2ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 250V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.425Ohm
Pulsed Drain Current-Max (IDM) 20A
Avalanche Energy Rating (Eas) 40 mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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