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BSZ900N15NS3GATMA1 Технические параметры

Infineon Technologies  BSZ900N15NS3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 13A Tc
Drive Voltage (Max Rds On, Min Rds On) 8V 10V
Number of Elements 1 Element
Power Dissipation (Max) 38W Tc
Turn Off Delay Time 8 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2011
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form NO LEAD
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Pin Count 8
JESD-30 Code S-PDSO-N5
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 38W
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 20μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 75V
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 150V
Drain-source On Resistance-Max 0.09Ohm
Pulsed Drain Current-Max (IDM) 52A
Avalanche Energy Rating (Eas) 30 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

BSZ900N15NS3GATMA1 Документы

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