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BTS110NKSA1 Технические параметры

Infineon Technologies  BTS110NKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10A Tc
Number of Elements 1 Element
Turn Off Delay Time 70 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series TEMPFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 40W
Terminal Position SINGLE
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Operating Mode ENHANCEMENT MODE
Power Dissipation 40W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V
Rise Time 45ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 55 ns
Continuous Drain Current (ID) 10A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.2Ohm
Pulsed Drain Current-Max (IDM) 40A
Radiation Hardening No
RoHS Status Non-RoHS Compliant

BTS110NKSA1 Документы

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