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BTS113ANKSA1 Технические параметры

Infineon Technologies  BTS113ANKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 11.5A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 40W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series TEMPFET®
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature LOGIC LEVEL COMPATIBLE
Свойство продукта Значение свойства
Terminal Position SINGLE
Configuration SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Operating Mode ENHANCEMENT MODE
Power Dissipation 40W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 5.8A, 4.5V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±10V
Continuous Drain Current (ID) 11.5A
JEDEC-95 Code TO-220AB
Pulsed Drain Current-Max (IDM) 46A
DS Breakdown Voltage-Min 60V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Просмотр сходства

BTS113ANKSA1 Документы

BTS113ANKSA1 brand manufacturers: Infineon Technologies, Anli stock, BTS113ANKSA1 reference price.Infineon Technologies. BTS113ANKSA1 parameters, BTS113ANKSA1 Datasheet PDF and pin diagram description download.You can use the BTS113ANKSA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find BTS113ANKSA1 pin diagram and circuit diagram and usage method of function,BTS113ANKSA1 electronics tutorials.You can download from the Anli.