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BTS115AE6327 Технические параметры

Infineon Technologies  BTS115AE6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1
Mfr Infineon Technologies
Package Bulk
Product Status Obsolete
Current - Continuous Drain (Id) @ 25℃ 15.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Свойство продукта Значение свойства
Power Dissipation (Max) 50W
RoHS Non-Compliant
Operating Temperature -55°C ~ 150°C (TJ)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 120mOhm @ 7.8A, 4.5V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 735 pF @ 25 V
Drain to Source Voltage (Vdss) 50 V
Vgs (Max) ±10V
FET Feature -
Просмотр сходства
BTS115AE6327 brand manufacturers: Infineon Technologies, Anli stock, BTS115AE6327 reference price.Infineon Technologies. BTS115AE6327 parameters, BTS115AE6327 Datasheet PDF and pin diagram description download.You can use the BTS115AE6327 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find BTS115AE6327 pin diagram and circuit diagram and usage method of function,BTS115AE6327 electronics tutorials.You can download from the Anli.