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BUZ31H3046XKSA1 Технические параметры

Infineon Technologies  BUZ31H3046XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 14.5A Tc
Drive Voltage (Max Rds On, Min Rds On) 5V
Number of Elements 1 Element
Power Dissipation (Max) 95W Tc
Turn Off Delay Time 150 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SIPMOS®
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 95W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 9A, 5V
Vgs(th) (Max) @ Id 4V @ 1mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1120pF @ 25V
Rise Time 50ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 14.5A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Drain-source On Resistance-Max 0.2Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 58A
Avalanche Energy Rating (Eas) 200 mJ
Height 9.45mm
Length 10.36mm
Width 4.52mm
RoHS Status RoHS Compliant
Lead Free Lead Free

BUZ31H3046XKSA1 Документы

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