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BUZ80A Технические параметры

Infineon Technologies  BUZ80A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.6A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 100W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SIPMOS®
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Drain to Source Voltage (Vdss) 800V
Vgs (Max) ±20V
Continuous Drain Current (ID) 3.6A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 3Ohm
Pulsed Drain Current-Max (IDM) 12A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 320 mJ
RoHS Status Non-RoHS Compliant
BUZ80A brand manufacturers: Infineon Technologies, Anli stock, BUZ80A reference price.Infineon Technologies. BUZ80A parameters, BUZ80A Datasheet PDF and pin diagram description download.You can use the BUZ80A Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find BUZ80A pin diagram and circuit diagram and usage method of function,BUZ80A electronics tutorials.You can download from the Anli.