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Infineon Technologies BUZ80A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | ||
Mount | Through Hole | |
Mounting Type | Through Hole | |
Package / Case | TO-220-3 | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 3.6A Tc | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 100W Tc | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tube | |
Series | SIPMOS® | |
JESD-609 Code | e0 | |
Part Status | Discontinued | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Additional Feature | AVALANCHE RATED | |
Terminal Position | SINGLE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Reach Compliance Code | unknown |
Свойство продукта | Значение свойства | |
---|---|---|
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Pin Count | 3 | |
JESD-30 Code | R-PSFM-T3 | |
Qualification Status | Not Qualified | |
Configuration | SINGLE | |
Operating Mode | ENHANCEMENT MODE | |
FET Type | N-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 3 Ω @ 2A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 1mA | |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 25V | |
Drain to Source Voltage (Vdss) | 800V | |
Vgs (Max) | ±20V | |
Continuous Drain Current (ID) | 3.6A | |
JEDEC-95 Code | TO-220AB | |
Drain Current-Max (Abs) (ID) | 3A | |
Drain-source On Resistance-Max | 3Ohm | |
Pulsed Drain Current-Max (IDM) | 12A | |
DS Breakdown Voltage-Min | 800V | |
Avalanche Energy Rating (Eas) | 320 mJ | |
RoHS Status | Non-RoHS Compliant |