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DF650R17IE4BOSA1 Технические параметры

Infineon Technologies  DF650R17IE4BOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 14 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 10Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.7kV
Collector-Emitter Saturation Voltage 2V
Number of Elements 1 Element
Operating Temperature -40°C~150°C
Series PrimePack™2
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10Terminations
ECCN Code EAR99
Max Power Dissipation 4.15kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 10
Qualification Status Not Qualified
Configuration Single
Case Connection ISOLATED
Power - Max 4150W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 930A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 720 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 650A
Turn Off Time-Nom (toff) 1870 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 54nF @ 25V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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DF650R17IE4BOSA1 Документы

DF650R17IE4BOSA1 brand manufacturers: Infineon Technologies, Anli stock, DF650R17IE4BOSA1 reference price.Infineon Technologies. DF650R17IE4BOSA1 parameters, DF650R17IE4BOSA1 Datasheet PDF and pin diagram description download.You can use the DF650R17IE4BOSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find DF650R17IE4BOSA1 pin diagram and circuit diagram and usage method of function,DF650R17IE4BOSA1 electronics tutorials.You can download from the Anli.