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DF80R12W2H3B11BOMA1 Технические параметры

Infineon Technologies  DF80R12W2H3B11BOMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
Mfr Infineon Technologies
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 50 A
Collector-Emitter Saturation Voltage 1.55
Series -
Свойство продукта Значение свойства
Operating Temperature -40°C ~ 150°C (TJ)
Configuration Dual Boost Chopper
Power - Max 190 W
Input Standard
Current - Collector Cutoff (Max) 1 mA
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A
Continuous Collector Current 20
IGBT Type -
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2350 pF @ 25 V

DF80R12W2H3B11BOMA1 Документы

  • Datasheets
DF80R12W2H3B11BOMA1 brand manufacturers: Infineon Technologies, Anli stock, DF80R12W2H3B11BOMA1 reference price.Infineon Technologies. DF80R12W2H3B11BOMA1 parameters, DF80R12W2H3B11BOMA1 Datasheet PDF and pin diagram description download.You can use the DF80R12W2H3B11BOMA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find DF80R12W2H3B11BOMA1 pin diagram and circuit diagram and usage method of function,DF80R12W2H3B11BOMA1 electronics tutorials.You can download from the Anli.