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Infineon Technologies DF80R12W2H3B11BOMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | - | |
| Mfr | Infineon Technologies | |
| Package | Bulk | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 50 A | |
| Collector-Emitter Saturation Voltage | 1.55 | |
| Series | - |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Configuration | Dual Boost Chopper | |
| Power - Max | 190 W | |
| Input | Standard | |
| Current - Collector Cutoff (Max) | 1 mA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 20A | |
| Continuous Collector Current | 20 | |
| IGBT Type | - | |
| NTC Thermistor | Yes | |
| Input Capacitance (Cies) @ Vce | 2350 pF @ 25 V |