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F3L150R07W2H3B11BPSA1 Технические параметры

Infineon Technologies  F3L150R07W2H3B11BPSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Mfr Infineon Technologies
Package Tray
Product Status Active
Maximum Gate Emitter Voltage ±20V
Maximum Collector Emitter Voltage 650 V
Pd - Power Dissipation -
Maximum Operating Temperature + 150 C
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 15
Part # Aliases F3L150R07W2H3_B11 SP001064170
Свойство продукта Значение свойства
Manufacturer Infineon
Brand Infineon Technologies
Collector- Emitter Voltage VCEO Max 650 V
Series *
Packaging Tray
Subcategory IGBTs
Configuration 3-Phase Inverter
Power Dissipation -
Product Type IGBT Modules
Continuous Collector Current 150A
Product IGBT Silicon Modules
Product Category IGBT Modules
Просмотр сходства

F3L150R07W2H3B11BPSA1 Документы

  • Datasheets
F3L150R07W2H3B11BPSA1 brand manufacturers: Infineon Technologies, Anli stock, F3L150R07W2H3B11BPSA1 reference price.Infineon Technologies. F3L150R07W2H3B11BPSA1 parameters, F3L150R07W2H3B11BPSA1 Datasheet PDF and pin diagram description download.You can use the F3L150R07W2H3B11BPSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find F3L150R07W2H3B11BPSA1 pin diagram and circuit diagram and usage method of function,F3L150R07W2H3B11BPSA1 electronics tutorials.You can download from the Anli.