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FF1000R17IE4DB2BOSA1 Технические параметры
Infineon Technologies FF1000R17IE4DB2BOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Factory Lead Time | 50 Weeks | |
| Mount | Screw | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Number of Pins | 12Pins | |
| Operating Temperature | -40°C~150°C | |
| Published | 2002 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Configuration | 2 Independent | |
| Element Configuration | Dual | |
| Power - Max | 6250W | |
| Halogen Free | Not Halogen Free | |
| Input | Standard | |
| Collector Emitter Voltage (VCEO) | 1.7kV | |
| Max Collector Current | 1.39kA | |
| Current - Collector Cutoff (Max) | 5mA | |
| Voltage - Collector Emitter Breakdown (Max) | 1700V | |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 1000A | |
| NTC Thermistor | Yes | |
| Input Capacitance (Cies) @ Vce | 81nF @ 25V | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Contains Lead |
FF1000R17IE4DB2BOSA1 Документы
- DatasheetsFF1000R17IE4D_B2
- PCN Assembly/OriginMult Dev Source Add 10/Sep/2018
- ConflictMineralStatementInfineon-company-51.pdf
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