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FF1200R17KE3B2NOSA1 Технические параметры

Infineon Technologies  FF1200R17KE3B2NOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Surface Mount NO
Transistor Element Material SILICON
Number of Elements 2 Elements
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10Terminations
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X10
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn On Time 1050 ns
Collector Current-Max (IC) 1700A
Turn Off Time-Nom (toff) 2100 ns
Collector-Emitter Voltage-Max 1700V
RoHS Status Non-RoHS Compliant
Просмотр сходства

FF1200R17KE3B2NOSA1 Документы

FF1200R17KE3B2NOSA1 brand manufacturers: Infineon Technologies, Anli stock, FF1200R17KE3B2NOSA1 reference price.Infineon Technologies. FF1200R17KE3B2NOSA1 parameters, FF1200R17KE3B2NOSA1 Datasheet PDF and pin diagram description download.You can use the FF1200R17KE3B2NOSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FF1200R17KE3B2NOSA1 pin diagram and circuit diagram and usage method of function,FF1200R17KE3B2NOSA1 electronics tutorials.You can download from the Anli.