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FF150R17ME3GBOSA1 Технические параметры

Infineon Technologies  FF150R17ME3GBOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 10 Weeks
Mount PCB, Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 11Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature -40°C~125°C
Published 2002
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11Terminations
ECCN Code EAR99
Max Power Dissipation 1.05kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 11
Qualification Status Not Qualified
Свойство продукта Значение свойства
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1050W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 240A
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 366 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 150A
Turn Off Time-Nom (toff) 1300 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 13.5nF @ 25V
Height 17mm
Length 122.1mm
Width 62mm
RoHS Status RoHS Compliant
Lead Free Contains Lead
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FF150R17ME3GBOSA1 Документы

FF150R17ME3GBOSA1 brand manufacturers: Infineon Technologies, Anli stock, FF150R17ME3GBOSA1 reference price.Infineon Technologies. FF150R17ME3GBOSA1 parameters, FF150R17ME3GBOSA1 Datasheet PDF and pin diagram description download.You can use the FF150R17ME3GBOSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FF150R17ME3GBOSA1 pin diagram and circuit diagram and usage method of function,FF150R17ME3GBOSA1 electronics tutorials.You can download from the Anli.