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FF200R12KT3EHOSA1 Технические параметры

Infineon Technologies  FF200R12KT3EHOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 14 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 7Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature -40°C~125°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7Terminations
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Configuration 2 Independent
Свойство продукта Значение свойства
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1050W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 295A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 215 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
Turn Off Time-Nom (toff) 680 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 14nF @ 25V
RoHS Status RoHS Compliant
Lead Free Lead Free
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FF200R12KT3EHOSA1 Документы

FF200R12KT3EHOSA1 brand manufacturers: Infineon Technologies, Anli stock, FF200R12KT3EHOSA1 reference price.Infineon Technologies. FF200R12KT3EHOSA1 parameters, FF200R12KT3EHOSA1 Datasheet PDF and pin diagram description download.You can use the FF200R12KT3EHOSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FF200R12KT3EHOSA1 pin diagram and circuit diagram and usage method of function,FF200R12KT3EHOSA1 electronics tutorials.You can download from the Anli.