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FF225R17ME4B11BOSA1 Технические параметры

Infineon Technologies  FF225R17ME4B11BOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 340A
Number of Elements 2 Elements
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 11Terminations
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
JESD-30 Code R-XUFM-X11
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1500W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 350 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 225A
Turn Off Time-Nom (toff) 1500 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 18.5nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead
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FF225R17ME4B11BOSA1 Документы

FF225R17ME4B11BOSA1 brand manufacturers: Infineon Technologies, Anli stock, FF225R17ME4B11BOSA1 reference price.Infineon Technologies. FF225R17ME4B11BOSA1 parameters, FF225R17ME4B11BOSA1 Datasheet PDF and pin diagram description download.You can use the FF225R17ME4B11BOSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FF225R17ME4B11BOSA1 pin diagram and circuit diagram and usage method of function,FF225R17ME4B11BOSA1 electronics tutorials.You can download from the Anli.