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FF225R17ME4BOSA1 Технические параметры

Infineon Technologies  FF225R17ME4BOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 16 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 11Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature -40°C~150°C
Series EconoDUAL™ 3
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 11Terminations
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 11
Qualification Status Not Qualified
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1500W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 340A
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 350 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 225A
Turn Off Time-Nom (toff) 1500 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 18.5nF @ 25V
RoHS Status RoHS Compliant

FF225R17ME4BOSA1 Документы

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