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Infineon Technologies FF23MR12W1M1B11BOMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Manufacturer Package Identifier | AG-EASY1BM-2 | |
| Turn Off Delay Time | 43.5 ns | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Tray | |
| Series | CoolSiC™+ | |
| Published | 2008 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | Not Applicable | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Channels | 2Channels | |
| Power Dissipation | 20mW | |
| Turn On Delay Time | 12 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 23m Ω @ 50A, 15V | |
| Vgs(th) (Max) @ Id | 5.55V @ 20mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3950pF @ 800V | |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 15V | |
| Drain to Source Voltage (Vdss) | 1200V 1.2kV | |
| Continuous Drain Current (ID) | 50A | |
| Max Junction Temperature (Tj) | 150°C | |
| FET Feature | Silicon Carbide (SiC) | |
| Height | 12.35mm | |
| RoHS Status | ROHS3 Compliant |