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FF600R12IE4VBOSA1 Технические параметры

Infineon Technologies  FF600R12IE4VBOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 50 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 600A
Number of Elements 2 Elements
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10Terminations
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
JESD-30 Code R-PUFM-X10
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 3350W
Transistor Application GENERAL PURPOSE
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 410 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 600A
Turn Off Time-Nom (toff) 1020 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 37nF @ 25V
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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FF600R12IE4VBOSA1 Документы

FF600R12IE4VBOSA1 brand manufacturers: Infineon Technologies, Anli stock, FF600R12IE4VBOSA1 reference price.Infineon Technologies. FF600R12IE4VBOSA1 parameters, FF600R12IE4VBOSA1 Datasheet PDF and pin diagram description download.You can use the FF600R12IE4VBOSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FF600R12IE4VBOSA1 pin diagram and circuit diagram and usage method of function,FF600R12IE4VBOSA1 electronics tutorials.You can download from the Anli.