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FF600R12ME4AB11BOSA1 Технические параметры

Infineon Technologies  FF600R12ME4AB11BOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 26 Weeks
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration 2 Independent
Element Configuration Dual
Свойство продукта Значение свойства
Power - Max 3350W
Halogen Free Not Halogen Free
Input Standard
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 37nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead
Просмотр сходства

FF600R12ME4AB11BOSA1 Документы

FF600R12ME4AB11BOSA1 brand manufacturers: Infineon Technologies, Anli stock, FF600R12ME4AB11BOSA1 reference price.Infineon Technologies. FF600R12ME4AB11BOSA1 parameters, FF600R12ME4AB11BOSA1 Datasheet PDF and pin diagram description download.You can use the FF600R12ME4AB11BOSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FF600R12ME4AB11BOSA1 pin diagram and circuit diagram and usage method of function,FF600R12ME4AB11BOSA1 electronics tutorials.You can download from the Anli.