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FF650R17IE4DB2BOSA1 Технические параметры

Infineon Technologies  FF650R17IE4DB2BOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 50 Weeks
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration 2 Independent
Power - Max 4150W
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 650A
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 54nF @ 25V
RoHS Status RoHS Compliant
Просмотр сходства

FF650R17IE4DB2BOSA1 Документы

FF650R17IE4DB2BOSA1 brand manufacturers: Infineon Technologies, Anli stock, FF650R17IE4DB2BOSA1 reference price.Infineon Technologies. FF650R17IE4DB2BOSA1 parameters, FF650R17IE4DB2BOSA1 Datasheet PDF and pin diagram description download.You can use the FF650R17IE4DB2BOSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FF650R17IE4DB2BOSA1 pin diagram and circuit diagram and usage method of function,FF650R17IE4DB2BOSA1 electronics tutorials.You can download from the Anli.