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FF750R17ME7DB11BPSA1 Технические параметры

Infineon Technologies  FF750R17ME7DB11BPSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
Mfr Infineon Technologies
Package Tray
Product Status Active
Current-Collector (Ic) (Max) 750 A
Collector-Emitter Saturation Voltage 1.7V
Maximum Gate Emitter Voltage ±20V
Maximum Collector Emitter Voltage 1700 V
Pd - Power Dissipation -
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 10
Continuous Collector Current at 25 C 750 A
Part # Aliases FF750R17ME7D_B11 SP005569131
Manufacturer Infineon
Свойство продукта Значение свойства
Brand Infineon Technologies
Collector- Emitter Voltage VCEO Max 1700 V
Operating Temperature -40°C ~ 175°C (TJ)
Packaging Tray
Subcategory IGBTs
Configuration Half Bridge Inverter
Power Dissipation 20mW
Power - Max 20 mW
Input Standard
Product Type IGBT Modules
Current - Collector Cutoff (Max) 5 mA
Voltage - Collector Emitter Breakdown (Max) 1700 V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 750A
Continuous Collector Current 750A
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 78.1 nF @ 25 V
Product IGBT Silicon Modules
Product Category IGBT Modules
Просмотр сходства

FF750R17ME7DB11BPSA1 Документы

  • Datasheets
FF750R17ME7DB11BPSA1 brand manufacturers: Infineon Technologies, Anli stock, FF750R17ME7DB11BPSA1 reference price.Infineon Technologies. FF750R17ME7DB11BPSA1 parameters, FF750R17ME7DB11BPSA1 Datasheet PDF and pin diagram description download.You can use the FF750R17ME7DB11BPSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FF750R17ME7DB11BPSA1 pin diagram and circuit diagram and usage method of function,FF750R17ME7DB11BPSA1 electronics tutorials.You can download from the Anli.