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FF900R12IP4DBOSA2 Технические параметры

Infineon Technologies  FF900R12IP4DBOSA2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 50 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 10Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 2 Elements
Operating Temperature -40°C~150°C
Series PrimePack™2
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7Terminations
ECCN Code EAR99
Max Power Dissipation 5.1kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 11
JESD-30 Code R-XUFM-X7
Свойство продукта Значение свойства
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 5100W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 900A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 370 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 900A
Turn Off Time-Nom (toff) 1300 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 54nF @ 25V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead
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FF900R12IP4DBOSA2 Документы

FF900R12IP4DBOSA2 brand manufacturers: Infineon Technologies, Anli stock, FF900R12IP4DBOSA2 reference price.Infineon Technologies. FF900R12IP4DBOSA2 parameters, FF900R12IP4DBOSA2 Datasheet PDF and pin diagram description download.You can use the FF900R12IP4DBOSA2 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FF900R12IP4DBOSA2 pin diagram and circuit diagram and usage method of function,FF900R12IP4DBOSA2 electronics tutorials.You can download from the Anli.