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FF900R12ME7WB11BPSA1 Технические параметры

Infineon Technologies  FF900R12ME7WB11BPSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Product Status Active
Package Tray
Mfr Infineon Technologies
Maximum Gate Emitter Voltage 20V
Maximum Collector Emitter Voltage 1200 V
Pd - Power Dissipation -
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 6
Part # Aliases FF900R12ME7W_B11 SP005589481
Свойство продукта Значение свойства
Manufacturer Infineon
Brand Infineon Technologies
Collector- Emitter Voltage VCEO Max 1200 V
Series *
Packaging Tray
Subcategory IGBTs
Configuration Dual
Power Dissipation -
Product Type IGBT Modules
Continuous Collector Current 890A
Product IGBT Silicon Modules
Product Category IGBT Modules
Просмотр сходства

FF900R12ME7WB11BPSA1 Документы

  • Datasheets
FF900R12ME7WB11BPSA1 brand manufacturers: Infineon Technologies, Anli stock, FF900R12ME7WB11BPSA1 reference price.Infineon Technologies. FF900R12ME7WB11BPSA1 parameters, FF900R12ME7WB11BPSA1 Datasheet PDF and pin diagram description download.You can use the FF900R12ME7WB11BPSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FF900R12ME7WB11BPSA1 pin diagram and circuit diagram and usage method of function,FF900R12ME7WB11BPSA1 electronics tutorials.You can download from the Anli.