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FP100R12N2T7B11BPSA1 Технические параметры

Infineon Technologies  FP100R12N2T7B11BPSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-ECONO2B
Mfr Infineon Technologies
Package Tray
Product Status Active
Current-Collector (Ic) (Max) 100 A
Maximum Gate Emitter Voltage 20V
Maximum Collector Emitter Voltage 1200 V
Pd - Power Dissipation -
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 15
Mounting Styles PCB Mount
Part # Aliases FP100R12N2T7_B11 SP005597715
Manufacturer Infineon
Brand Infineon Technologies
Свойство продукта Значение свойства
Collector- Emitter Voltage VCEO Max 1200 V
Operating Temperature -40°C ~ 175°C (TJ)
Packaging Tray
Subcategory IGBTs
Technology Si
Configuration Three Phase Inverter
Power Dissipation -
Power - Max 20 mW
Input Three Phase Bridge Rectifier
Product Type IGBT Modules
Current - Collector Cutoff (Max) 10 μA
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 100A
Continuous Collector Current 100A
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 21.7 nF @ 25 V
Product IGBT Silicon Modules
Product Category IGBT Modules
Просмотр сходства

FP100R12N2T7B11BPSA1 Документы

  • Datasheets
FP100R12N2T7B11BPSA1 brand manufacturers: Infineon Technologies, Anli stock, FP100R12N2T7B11BPSA1 reference price.Infineon Technologies. FP100R12N2T7B11BPSA1 parameters, FP100R12N2T7B11BPSA1 Datasheet PDF and pin diagram description download.You can use the FP100R12N2T7B11BPSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FP100R12N2T7B11BPSA1 pin diagram and circuit diagram and usage method of function,FP100R12N2T7B11BPSA1 electronics tutorials.You can download from the Anli.