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FP150R12N3T7B80BPSA1 Технические параметры

Infineon Technologies  FP150R12N3T7B80BPSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-ECONO3B
Mfr Infineon Technologies
Package Tape & Reel (TR)
Product Status Active
Current-Collector (Ic) (Max) 150 A
Maximum Gate Emitter Voltage 20 V
Pd - Power Dissipation 20 mW
Maximum Operating Temperature + 175 C
Collector-Emitter Saturation Voltage 1.55 V
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 10
Continuous Collector Current at 25 C 150 A
Mounting Styles PCB Mount
Part # Aliases FP150R12N3T7_B80 SP005341834
Manufacturer Infineon
Свойство продукта Значение свойства
Brand Infineon Technologies
Collector- Emitter Voltage VCEO Max 1200 V
Operating Temperature -40°C ~ 175°C (TJ)
Packaging Tray
Subcategory IGBTs
Technology Si
Configuration Three Phase Inverter
Power - Max 20 mW
Input Three Phase Bridge Rectifier
Product Type IGBT Modules
Current - Collector Cutoff (Max) 12 μA
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 1.55V @ 15V, 150A
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 30.1 nF @ 25 V
Product IGBT Silicon Modules
Product Category IGBT Modules
Просмотр сходства
FP150R12N3T7B80BPSA1 brand manufacturers: Infineon Technologies, Anli stock, FP150R12N3T7B80BPSA1 reference price.Infineon Technologies. FP150R12N3T7B80BPSA1 parameters, FP150R12N3T7B80BPSA1 Datasheet PDF and pin diagram description download.You can use the FP150R12N3T7B80BPSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FP150R12N3T7B80BPSA1 pin diagram and circuit diagram and usage method of function,FP150R12N3T7B80BPSA1 electronics tutorials.You can download from the Anli.