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FP15R12W1T4BOMA1 Технические параметры

Infineon Technologies  FP15R12W1T4BOMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 16 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 23Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 7 Elements
Operating Temperature -40°C~150°C
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 23Terminations
ECCN Code EAR99
Max Power Dissipation 130W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 23
Qualification Status Not Qualified
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 130W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 28A
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 120 ns
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 15A
Turn Off Time-Nom (toff) 495 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 890pF @ 25V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
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FP15R12W1T4BOMA1 Документы

FP15R12W1T4BOMA1 brand manufacturers: Infineon Technologies, Anli stock, FP15R12W1T4BOMA1 reference price.Infineon Technologies. FP15R12W1T4BOMA1 parameters, FP15R12W1T4BOMA1 Datasheet PDF and pin diagram description download.You can use the FP15R12W1T4BOMA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FP15R12W1T4BOMA1 pin diagram and circuit diagram and usage method of function,FP15R12W1T4BOMA1 electronics tutorials.You can download from the Anli.