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FP200R12N3T7BPSA1 Технические параметры
Infineon Technologies FP200R12N3T7BPSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Mounting Type | Chassis Mount | |
| Mfr | Infineon Technologies | |
| Package | Tray | |
| Product Status | Active | |
| Base Product Number | FP200R12 | |
| Collector-Emitter Saturation Voltage | 1.55 | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | Module | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Pd - Power Dissipation | - | |
| Maximum Operating Temperature | + 175 C | |
| Minimum Operating Temperature | - 40 C | |
| Factory Pack QuantityFactory Pack Quantity | 10 | |
| Continuous Collector Current at 25 C | 200 A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Part # Aliases | FP200R12N3T7 SP005337548 | |
| Manufacturer | Infineon | |
| Brand | Infineon Technologies | |
| Collector- Emitter Voltage VCEO Max | 1200 V | |
| Series | * | |
| Packaging | Tray | |
| Subcategory | IGBTs | |
| Pin Count | 46 | |
| Configuration | 3 Phase | |
| Power Dissipation | - | |
| Product Type | IGBT Modules | |
| Channel Type | N | |
| Continuous Collector Current | 200 | |
| Product | IGBT Silicon Modules | |
| Product Category | IGBT Modules |
FP200R12N3T7BPSA1 Документы
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