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Infineon Technologies FP50R12N2T7BPSA2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Package / Case | Module | |
| Mounting Type | Chassis Mount | |
| Supplier Device Package | AG-ECONO2B | |
| Base Product Number | FP50R12 | |
| Current-Collector (Ic) (Max) | 50 A | |
| Product Status | Active | |
| Package | Tray | |
| Mfr | Infineon Technologies | |
| Collector-Emitter Saturation Voltage | 1.5V | |
| Pd - Power Dissipation | - | |
| Maximum Operating Temperature | + 175 C | |
| Minimum Operating Temperature | - 40 C | |
| Factory Pack QuantityFactory Pack Quantity | 15 | |
| Continuous Collector Current at 25 C | 50 A | |
| Part # Aliases | FP50R12N2T7 SP005596507 | |
| Manufacturer | Infineon | |
| Brand | Infineon Technologies |
| Свойство продукта | Значение свойства | |
|---|---|---|
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 1200 V | |
| Operating Temperature | -40°C ~ 175°C (TJ) | |
| Packaging | Tray | |
| Subcategory | IGBTs | |
| Configuration | Three Phase Inverter | |
| Power Dissipation | - | |
| Power - Max | 20 mW | |
| Input | Three Phase Bridge Rectifier | |
| Product Type | IGBT Modules | |
| Current - Collector Cutoff (Max) | 10 μA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 50A | |
| Continuous Collector Current | 50A | |
| IGBT Type | Trench Field Stop | |
| NTC Thermistor | Yes | |
| Input Capacitance (Cies) @ Vce | 11.1 nF @ 25 V | |
| Product | IGBT Silicon Modules | |
| Product Category | IGBT Modules |