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FP75R12KE3BOSA1 Технические параметры

Infineon Technologies  FP75R12KE3BOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 24Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 7 Elements
Operating Temperature -40°C~125°C TJ
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 35Terminations
ECCN Code EAR99
Max Power Dissipation 350W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 35
JESD-30 Code R-XUFM-X35
Свойство продукта Значение свойства
Polarity NPN
Configuration Single
Power Dissipation 350W
Case Connection ISOLATED
Power - Max 355W
Forward Current 75A
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 105A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 330 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 75A
Turn Off Time-Nom (toff) 610 ns
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 5.3nF @ 25V
Height 17mm
Length 122mm
Width 62mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Просмотр сходства

FP75R12KE3BOSA1 Документы

FP75R12KE3BOSA1 brand manufacturers: Infineon Technologies, Anli stock, FP75R12KE3BOSA1 reference price.Infineon Technologies. FP75R12KE3BOSA1 parameters, FP75R12KE3BOSA1 Datasheet PDF and pin diagram description download.You can use the FP75R12KE3BOSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FP75R12KE3BOSA1 pin diagram and circuit diagram and usage method of function,FP75R12KE3BOSA1 electronics tutorials.You can download from the Anli.