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FP75R12KT4B11BOSA1 Технические параметры

Infineon Technologies  FP75R12KT4B11BOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Factory Lead Time 12 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Number of Pins 35Pins
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 75A
Number of Elements 7 Elements
Operating Temperature -40°C~150°C TJ
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 35Terminations
ECCN Code EAR99
Additional Feature UL APPROVED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 385W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 210 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 75A
Turn Off Time-Nom (toff) 620 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 4.3nF @ 25V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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FP75R12KT4B11BOSA1 Документы

FP75R12KT4B11BOSA1 brand manufacturers: Infineon Technologies, Anli stock, FP75R12KT4B11BOSA1 reference price.Infineon Technologies. FP75R12KT4B11BOSA1 parameters, FP75R12KT4B11BOSA1 Datasheet PDF and pin diagram description download.You can use the FP75R12KT4B11BOSA1 Transistors - IGBTs - Modules, DSP Datesheet PDF, find FP75R12KT4B11BOSA1 pin diagram and circuit diagram and usage method of function,FP75R12KT4B11BOSA1 electronics tutorials.You can download from the Anli.